IPB020NE7N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

480A

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Number of Terminals :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature (Max) :

175°C

Avalanche Energy Rating (Eas) :

1100 mJ

Drain Current-Max (Abs) (ID) :

120A

Drain-source On Resistance-Max :

0.002Ohm

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Pbfree Code :

icon-pbfree no

JESD-609 Code :

e3

Number of Elements :

1

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-263AB

DS Breakdown Voltage-Min :

75V

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

RoHS Compliant