IPB020N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Number of Channels :

1

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

33 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.8V @ 270μA

Drain-source On Resistance-Max :

0.002Ohm

Number of Elements :

1

Power Dissipation-Max :

375W Tc

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

120A

Turn-Off Delay Time :

77 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Avalanche Energy Rating (Eas) :

979 mJ

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

480A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2013

Rise Time :

26ns

Input Capacitance (Ciss) (Max) @ Vds :

15600pF @ 50V

Series :

OptiMOS™

Max Dual Supply Voltage :

100V

Number of Terminations :

2

Fall Time (Typ) :

29 ns

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Element Configuration :

Single

Weight :

3.949996g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

375W

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Factory Lead Time :

13 Weeks

Vgs (Max) :

±20V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Mounting Type :

Surface Mount