IPB020N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.002Ohm

Lead Free :

Contains Lead

Factory Lead Time :

13 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

15600pF @ 50V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

480A

Halogen Free :

Halogen Free

Avalanche Energy Rating (Eas) :

979 mJ

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Turn-Off Delay Time :

77 ns

ECCN Code :

EAR99

Published :

2013

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Channels :

1

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.8V @ 270μA

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Pins :

3

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn On Delay Time :

33 ns

Max Dual Supply Voltage :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

29 ns

Weight :

3.949996g

Series :

OptiMOS™

FET Type :

N-Channel

Power Dissipation :

375W

Power Dissipation-Max :

375W Tc

Continuous Drain Current (ID) :

120A

Rise Time :

26ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ