IPB020N08N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Max Dual Supply Voltage :

80V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Number of Channels :

1

Fall Time (Typ) :

20 ns

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

OptiMOS™

Vgs (Max) :

±20V

Turn-Off Delay Time :

62 ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

166nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.8V @ 208μA

Drain-source On Resistance-Max :

0.002Ohm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

120A

Halogen Free :

Halogen Free

Pulsed Drain Current-Max (IDM) :

480A

Terminal Form :

Gull wing

Power Dissipation-Max :

300W Tc

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Factory Lead Time :

13 Weeks

Number of Elements :

1

Weight :

3.949996g

Input Capacitance (Ciss) (Max) @ Vds :

12100pF @ 40V

Turn On Delay Time :

28 ns

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

674 mJ

Rise Time :

16ns

Published :

2013