IPB019N08N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

80V

Max Dual Supply Voltage :

80V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Continuous Drain Current (ID) :

180A

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Rise Time :

73ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

14200pF @ 40V

Number of Pins :

7

Threshold Voltage :

2.8V

FET Type :

N-Channel

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Turn On Delay Time :

28 ns

JESD-30 Code :

R-PSSO-G6

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Factory Lead Time :

13 Weeks

Case Connection :

DRAIN

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

206nC @ 10V

Pbfree Code :

No

Terminal Position :

Single

Max Junction Temperature (Tj) :

175°C

Series :

OptiMOS™

Power Dissipation-Max :

300W Tc

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.5V @ 270µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

300W

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

33 ns

Height :

4.5mm

Vgs (Max) :

±20V

Turn-Off Delay Time :

86 ns

Pin Count :

7

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 100A, 10V

Transistor Element Material :

SILICON

Number of Terminations :

6

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE