FQAF9P25
- Mfr.Part #
- FQAF9P25
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 250V 7.1A TO3PF
- Stock
- 360
- In Stock :
- 360
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 620m Ω @ 3.55A, 10V
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 250V
- Series :
- QFET®
- Qualification Status :
- COMMERCIAL
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Case Connection :
- Isolated
- DS Breakdown Voltage-Min :
- 250V
- Drain-source On Resistance-Max :
- 0.62Ohm
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 28.4A
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Surface Mount :
- No
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 7.1A
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.18pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 650 mJ
- Terminal Finish :
- MATTE TIN
- Current - Continuous Drain (Id) @ 25°C :
- 7.1A Tc
- Power Dissipation-Max :
- 70W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- FET Type :
- P-Channel
- Package / Case :
- TO-3P-3 Full Pack
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- FQAF9P25

P-Channel Tube 620m Ω @ 3.55A, 10V ±30V 1.18pF @ 25V 38nC @ 10V 250V TO-3P-3 Full Pack
FQAF9P25 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 650 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.18pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 7.1A.Peak drain current is 28.4A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQAF9P25 Features
the avalanche energy rating (Eas) is 650 mJ
based on its rated peak drain current 28.4A.
a 250V drain to source voltage (Vdss)
FQAF9P25 Applications
There are a lot of Rochester Electronics, LLC
FQAF9P25 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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