FQAF13N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

120W Tc

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Number of Elements :

1

Vgs (Max) :

±30V

Fall Time (Typ) :

110 ns

Weight :

6.962g

Series :

QFET®

Power Dissipation :

120W

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-3P-3 Full Pack

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Mounting Type :

Through Hole

Voltage - Rated DC :

800V

ECCN Code :

EAR99

Lead Free :

Lead Free

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Pbfree Code :

yes

Number of Terminations :

3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

800V

Turn On Delay Time :

60 ns

Turn-Off Delay Time :

155 ns

Current Rating :

8A

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

4 Weeks

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Height :

16.7mm

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Width :

5.7mm

Rds On (Max) @ Id, Vgs :

750m Ω @ 4A, 10V

Element Configuration :

Single

Length :

15.7mm

Drain Current-Max (Abs) (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

8A

Published :

2001

Terminal Finish :

Tin (Sn)

Rise Time :

150ns

Transistor Application :

SWITCHING

Resistance :

750mOhm