FQAF15N70

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

3.6pF @ 25V

Avalanche Energy Rating (Eas) :

950 mJ

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

38A

Series :

QFET®

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

9.5A

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.56Ohm

Packaging :

Tube

Package / Case :

TO-3P-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

700V

Pin Count :

3

Vgs (Max) :

±30V

JESD-609 Code :

e3

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

Not Applicable

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Power Dissipation-Max :

120W Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

700V

Rds On (Max) @ Id, Vgs :

560m Ω @ 4.8A, 10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable