FQAF14N30

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

290m Ω @ 5.7A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.29Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1.36pF @ 25V

Terminal Position :

Single

Power Dissipation-Max :

90W Tc

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

600 mJ

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

300V

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Number of Elements :

1

DS Breakdown Voltage-Min :

300V

Pulsed Drain Current-Max (IDM) :

45.6A

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

QFET®

Drain Current-Max (Abs) (ID) :

11.4A

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Packaging :

Tube

Pin Count :

3

Surface Mount :

No

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-3P-3 Full Pack

Mounting Type :

Through Hole