FQAF15N70

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3.6pF @ 25V

Mounting Type :

Through Hole

FET Type :

N-Channel

Packaging :

Tube

Package / Case :

TO-3P-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

120W Tc

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Terminations :

3

DS Breakdown Voltage-Min :

700V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

950 mJ

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

38A

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

Isolated

Terminal Position :

Single

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

9.5A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Drain-source On Resistance-Max :

0.56Ohm

Drain to Source Voltage (Vdss) :

700V

Pin Count :

3

Surface Mount :

No

Number of Elements :

1

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

560m Ω @ 4.8A, 10V

Transistor Application :

SWITCHING