FQAF10N80

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Mfr.Part #
FQAF10N80
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 800V 6.7A TO3PF
Stock
7,549
In Stock :
7,549

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Package / Case :
TO-3P-3 Full Pack
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
6.7A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
FET Type :
N-Channel
Series :
QFET®
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Reach Compliance Code :
Unknown
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Drain to Source Voltage (Vdss) :
800V
Gate Charge (Qg) (Max) @ Vgs :
71nC @ 10V
DS Breakdown Voltage-Min :
800V
Drain Current-Max (Abs) (ID) :
6.7A
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Case Connection :
Isolated
Mounting Type :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
5V @ 250μA
Packaging :
Tube
Avalanche Energy Rating (Eas) :
920 mJ
Pulsed Drain Current-Max (IDM) :
26.8A
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
Not Applicable
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 3.35A, 10V
Power Dissipation-Max :
113W Tc
JESD-609 Code :
e3
Number of Terminations :
3
Qualification Status :
COMMERCIAL
Terminal Finish :
MATTE TIN
Input Capacitance (Ciss) (Max) @ Vds :
2.7pF @ 25V
RoHS Status :
ROHS3 Compliant
Datasheets
FQAF10N80
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQAF10N80 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3 Full Pack, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, FQAF10N80 pinout, FQAF10N80 datasheet PDF, FQAF10N80 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQAF10N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQAF10N80


N-Channel Tube 1.05 Ω @ 3.35A, 10V ±30V 2.7pF @ 25V 71nC @ 10V 800V TO-3P-3 Full Pack

FQAF10N80 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 920 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.7pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 6.7A.Peak drain current is 26.8A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FQAF10N80 Features


the avalanche energy rating (Eas) is 920 mJ
based on its rated peak drain current 26.8A.
a 800V drain to source voltage (Vdss)


FQAF10N80 Applications


There are a lot of Rochester Electronics, LLC
FQAF10N80 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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