FQAF10N80

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Surface Mount :

No

Drain to Source Voltage (Vdss) :

800V

Pbfree Code :

yes

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 3.35A, 10V

Package / Case :

TO-3P-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Drain Current-Max (Abs) (ID) :

6.7A

Input Capacitance (Ciss) (Max) @ Vds :

2.7pF @ 25V

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

920 mJ

Vgs (Max) :

±30V

FET Type :

N-Channel

Number of Elements :

1

Mounting Type :

Through Hole

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

26.8A

Pin Count :

3

Peak Reflow Temperature (Cel) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation-Max :

113W Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

DS Breakdown Voltage-Min :

800V

Operating Mode :

ENHANCEMENT MODE