FQAF11N90C
- Mfr.Part #
- FQAF11N90C
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 7A TO3PF
- Stock
- 4
- In Stock :
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 3.5A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 85 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3290pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 900V
- Power Dissipation :
- 120W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 120W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 960 mJ
- Pulsed Drain Current-Max (IDM) :
- 28A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 900V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Series :
- QFET®
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 60 ns
- Vgs (Max) :
- ±30V
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Rise Time :
- 130ns
- Turn-Off Delay Time :
- 130 ns
- Current Rating :
- 11A
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 6.962g
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Published :
- 2013
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Package / Case :
- TO-3P-3 Full Pack
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 7A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Drain Current-Max (Abs) (ID) :
- 7A
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FQAF11N90C

N-Channel Tube 1.1 Ω @ 3.5A, 10V ±30V 3290pF @ 25V 80nC @ 10V TO-3P-3 Full Pack
FQAF11N90C Description
FQAF11N90C is a type of N-channel QFET? MOSFET that is manufactured by ON Semiconductor based on the proprietary planar stripe and DMOS technology. On the basis of this technology, low on-state resistance, advanced switching performance, and high avalanche energy strength can be ensured. FQAF11N90C is well suited for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQAF11N90C Features
-
Low on-state resistance
-
Advanced switching performance
-
High avalanche energy strength
-
Available in the TO-3PF package
-
Proprietary planar stripe and DMOS technology
FQAF11N90C Applications
-
Electronic lamp ballasts
-
Switched-mode power supplies
-
Active power factor correction (PFC)
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