FQAF11N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

85 ns

Power Dissipation-Max :

120W Tc

Rise Time :

130ns

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Power Dissipation :

120W

JESD-609 Code :

e3

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

130 ns

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

60 ns

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

7A

Published :

2013

Continuous Drain Current (ID) :

7A

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Current Rating :

11A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Transistor Application :

SWITCHING

Element Configuration :

Single

Package / Case :

TO-3P-3 Full Pack

Terminal Finish :

Tin (Sn)

Case Connection :

Isolated

Number of Elements :

1

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

ECCN Code :

EAR99

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

960 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Voltage - Rated DC :

900V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

4 Weeks

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3.5A, 10V

Pulsed Drain Current-Max (IDM) :

28A

Weight :

6.962g

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

900V

Transistor Element Material :

SILICON