FQAF11N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

85 ns

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

900V

Power Dissipation :

120W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

120W Tc

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

960 mJ

Pulsed Drain Current-Max (IDM) :

28A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

900V

Number of Elements :

1

JESD-609 Code :

e3

Series :

QFET®

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Turn On Delay Time :

60 ns

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Rise Time :

130ns

Turn-Off Delay Time :

130 ns

Current Rating :

11A

Mount :

Through Hole

Transistor Element Material :

SILICON

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Weight :

6.962g

Packaging :

Tube

Mounting Type :

Through Hole

Published :

2013

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Package / Case :

TO-3P-3 Full Pack

Pbfree Code :

yes

Continuous Drain Current (ID) :

7A

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Drain Current-Max (Abs) (ID) :

7A

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

FET Type :

N-Channel

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED