FQAF11N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

7A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Turn On Delay Time :

60 ns

Power Dissipation-Max :

120W Tc

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

7A

Rise Time :

130ns

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3.5A, 10V

Transistor Application :

SWITCHING

Fall Time (Typ) :

85 ns

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Turn-Off Delay Time :

130 ns

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Factory Lead Time :

4 Weeks

Series :

QFET®

Published :

2013

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Pbfree Code :

yes

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

28A

Case Connection :

Isolated

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Weight :

6.962g

Avalanche Energy Rating (Eas) :

960 mJ

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

900V

Current Rating :

11A

Package / Case :

TO-3P-3 Full Pack

Power Dissipation :

120W

Element Configuration :

Single

Number of Elements :

1

Voltage - Rated DC :

900V

Vgs(th) (Max) @ Id :

5V @ 250μA