FQAF11N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Series :

QFET®

Voltage - Rated DC :

900V

Drain to Source Breakdown Voltage :

900V

Element Configuration :

Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Case Connection :

Isolated

Mount :

Through Hole

Published :

2013

ECCN Code :

EAR99

Continuous Drain Current (ID) :

7A

Rise Time :

130ns

Qualification Status :

Not Qualified

Turn-Off Delay Time :

130 ns

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Current Rating :

11A

Package / Case :

TO-3P-3 Full Pack

Power Dissipation :

120W

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

120W Tc

Lead Free :

Lead Free

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Fall Time (Typ) :

85 ns

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

7A

Turn On Delay Time :

60 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Factory Lead Time :

4 Weeks

Weight :

6.962g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

28A

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Avalanche Energy Rating (Eas) :

960 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)