FQAF16N25

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Mfr.Part #
FQAF16N25
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 250V 12.4A TO3PF
Stock
1
In Stock :
1

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
12.4A Tc
Mounting Type :
Through Hole
Power Dissipation-Max :
85W Tc
Drain-source On Resistance-Max :
0.23Ohm
Qualification Status :
COMMERCIAL
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-3P-3 Full Pack
Terminal Finish :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
50A
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain to Source Voltage (Vdss) :
250V
Drain Current-Max (Abs) (ID) :
12.4A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Vgs (Max) :
±30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Series :
QFET®
Rds On (Max) @ Id, Vgs :
230m Ω @ 6.2A, 10V
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1.2pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
DS Breakdown Voltage-Min :
250V
Avalanche Energy Rating (Eas) :
560 mJ
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Datasheets
FQAF16N25
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQAF16N25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-3P-3 Full Pack, Operating Temperature:-55°C~150°C TJ, FQAF16N25 pinout, FQAF16N25 datasheet PDF, FQAF16N25 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQAF16N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQAF16N25


N-Channel Tube 230m Ω @ 6.2A, 10V ±30V 1.2pF @ 25V 35nC @ 10V 250V TO-3P-3 Full Pack

FQAF16N25 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 560 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.2pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 12.4A.Peak drain current is 50A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FQAF16N25 Features


the avalanche energy rating (Eas) is 560 mJ
based on its rated peak drain current 50A.
a 250V drain to source voltage (Vdss)


FQAF16N25 Applications


There are a lot of Rochester Electronics, LLC
FQAF16N25 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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