FQAF16N25
- Mfr.Part #
- FQAF16N25
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 12.4A TO3PF
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 12.4A Tc
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 85W Tc
- Drain-source On Resistance-Max :
- 0.23Ohm
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-3P-3 Full Pack
- Terminal Finish :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 50A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 250V
- Drain Current-Max (Abs) (ID) :
- 12.4A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Series :
- QFET®
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 6.2A, 10V
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.2pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 250V
- Avalanche Energy Rating (Eas) :
- 560 mJ
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FQAF16N25

N-Channel Tube 230m Ω @ 6.2A, 10V ±30V 1.2pF @ 25V 35nC @ 10V 250V TO-3P-3 Full Pack
FQAF16N25 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 560 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.2pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 12.4A.Peak drain current is 50A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQAF16N25 Features
the avalanche energy rating (Eas) is 560 mJ
based on its rated peak drain current 50A.
a 250V drain to source voltage (Vdss)
FQAF16N25 Applications
There are a lot of Rochester Electronics, LLC
FQAF16N25 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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