FQAF10N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

DS Breakdown Voltage-Min :

800V

Peak Reflow Temperature (Cel) :

Not Applicable

Avalanche Energy Rating (Eas) :

920 mJ

Package / Case :

TO-3P-3 Full Pack

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

800V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2.7pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Surface Mount :

No

Number of Elements :

1

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

26.8A

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

Mounting Type :

Through Hole

Power Dissipation-Max :

113W Tc

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

6.7A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 3.35A, 10V

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE