FQAF16N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

560 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.23Ohm

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Series :

QFET®

Rds On (Max) @ Id, Vgs :

230m Ω @ 6.2A, 10V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

NOT SPECIFIED

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Drain Current-Max (Abs) (ID) :

12.4A

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Package / Case :

TO-3P-3 Full Pack

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Terminal Position :

Single

DS Breakdown Voltage-Min :

250V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

250V

Power Dissipation-Max :

85W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1.2pF @ 25V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

50A

Number of Terminations :

3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

12.4A Tc