FQAF11N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

120W Tc

Pulsed Drain Current-Max (IDM) :

28.8A

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

960m Ω @ 3.6A, 10V

Package / Case :

TO-3P-3 Full Pack

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pin Count :

3

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSFM-T3

Case Connection :

Isolated

Series :

QFET®

Peak Reflow Temperature (Cel) :

Not Applicable

Drain Current-Max (Abs) (ID) :

7.2A

Drain to Source Voltage (Vdss) :

900V

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

1000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3.5pF @ 25V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Vgs (Max) :

±30V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

7.2A Tc

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Number of Elements :

1

DS Breakdown Voltage-Min :

900V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.96Ohm

RoHS Status :

ROHS3 Compliant