FQAF11N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

3.5pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

7.2A Tc

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

7.2A

Pulsed Drain Current-Max (IDM) :

28.8A

Rds On (Max) @ Id, Vgs :

960m Ω @ 3.6A, 10V

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Terminal Position :

Single

JESD-609 Code :

e3

Vgs (Max) :

±30V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Power Dissipation-Max :

120W Tc

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.96Ohm

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

900V

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Transistor Element Material :

SILICON

Pin Count :

3

Avalanche Energy Rating (Eas) :

1000 mJ

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

900V

Package / Case :

TO-3P-3 Full Pack

Packaging :

Tube

Number of Terminations :

3