FQAF14N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

290m Ω @ 5.7A, 10V

Surface Mount :

No

Power Dissipation-Max :

90W Tc

Pulsed Drain Current-Max (IDM) :

45.6A

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

1.36pF @ 25V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.29Ohm

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Number of Terminations :

3

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

300V

DS Breakdown Voltage-Min :

300V

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

11.4A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Case Connection :

Isolated

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Series :

QFET®

Terminal Finish :

NOT SPECIFIED

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Package / Case :

TO-3P-3 Full Pack

Avalanche Energy Rating (Eas) :

600 mJ