FQAF14N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

DS Breakdown Voltage-Min :

300V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

1.36pF @ 25V

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

45.6A

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-3P-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

NOT SPECIFIED

Power Dissipation-Max :

90W Tc

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.29Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

290m Ω @ 5.7A, 10V

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

11.4A

FET Type :

N-Channel

Terminal Position :

Single

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

600 mJ

Drain to Source Voltage (Vdss) :

300V