FQAF14N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

290m Ω @ 5.7A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.36pF @ 25V

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

600 mJ

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-3P-3 Full Pack

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Number of Terminations :

3

Case Connection :

Isolated

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

45.6A

Drain Current-Max (Abs) (ID) :

11.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

300V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.29Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Power Dissipation-Max :

90W Tc

DS Breakdown Voltage-Min :

300V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

NOT SPECIFIED

Number of Elements :

1

Transistor Element Material :

SILICON