FQAF9P25
- Mfr.Part #
- FQAF9P25
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 250V 7.1A TO3PF
- Stock
- 360
- In Stock :
- 360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- Isolated
- Pulsed Drain Current-Max (IDM) :
- 28.4A
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- Not Applicable
- FET Type :
- P-Channel
- Qualification Status :
- COMMERCIAL
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Packaging :
- Tube
- Series :
- QFET®
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-3P-3 Full Pack
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 250V
- Terminal Finish :
- MATTE TIN
- Drain-source On Resistance-Max :
- 0.62Ohm
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 620m Ω @ 3.55A, 10V
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 250V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Current - Continuous Drain (Id) @ 25°C :
- 7.1A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 7.1A
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 70W Tc
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 650 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.18pF @ 25V
- Datasheets
- FQAF9P25

P-Channel Tube 620m Ω @ 3.55A, 10V ±30V 1.18pF @ 25V 38nC @ 10V 250V TO-3P-3 Full Pack
FQAF9P25 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 650 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.18pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 7.1A.Peak drain current is 28.4A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQAF9P25 Features
the avalanche energy rating (Eas) is 650 mJ
based on its rated peak drain current 28.4A.
a 250V drain to source voltage (Vdss)
FQAF9P25 Applications
There are a lot of Rochester Electronics, LLC
FQAF9P25 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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