FQAF9P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

650 mJ

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain Current-Max (Abs) (ID) :

7.1A

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

250V

Pbfree Code :

yes

Package / Case :

TO-3P-3 Full Pack

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.18pF @ 25V

Number of Elements :

1

Series :

QFET®

Drain-source On Resistance-Max :

0.62Ohm

FET Type :

P-Channel

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

JESD-30 Code :

R-PSFM-T3

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

70W Tc

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

620m Ω @ 3.55A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

28.4A

Drain to Source Voltage (Vdss) :

250V

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ