FQAF9P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Surface Mount :

No

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Case Connection :

Isolated

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

250V

Power Dissipation-Max :

70W Tc

JESD-609 Code :

e3

Number of Terminations :

3

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

28.4A

Drain Current-Max (Abs) (ID) :

7.1A

Rds On (Max) @ Id, Vgs :

620m Ω @ 3.55A, 10V

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc

Mounting Type :

Through Hole

Series :

QFET®

Package / Case :

TO-3P-3 Full Pack

DS Breakdown Voltage-Min :

250V

Input Capacitance (Ciss) (Max) @ Vds :

1.18pF @ 25V

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.62Ohm

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

650 mJ

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown