FQAF9P25

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Mfr.Part #
FQAF9P25
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET P-CH 250V 7.1A TO3PF
Stock
360
In Stock :
360

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
JESD-30 Code :
R-PSFM-T3
Case Connection :
Isolated
Pulsed Drain Current-Max (IDM) :
28.4A
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
Not Applicable
FET Type :
P-Channel
Qualification Status :
COMMERCIAL
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±30V
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
5V @ 250μA
Packaging :
Tube
Series :
QFET®
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Transistor Element Material :
SILICON
Package / Case :
TO-3P-3 Full Pack
Number of Elements :
1
Drain to Source Voltage (Vdss) :
250V
Terminal Finish :
MATTE TIN
Drain-source On Resistance-Max :
0.62Ohm
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
620m Ω @ 3.55A, 10V
Pin Count :
3
DS Breakdown Voltage-Min :
250V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Current - Continuous Drain (Id) @ 25°C :
7.1A Tc
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Drain Current-Max (Abs) (ID) :
7.1A
Pbfree Code :
yes
Power Dissipation-Max :
70W Tc
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
650 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
1.18pF @ 25V
Datasheets
FQAF9P25
Introducing Transistors - FETs, MOSFETs - Single onsemi FQAF9P25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3 Full Pack, FQAF9P25 pinout, FQAF9P25 datasheet PDF, FQAF9P25 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQAF9P25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQAF9P25


P-Channel Tube 620m Ω @ 3.55A, 10V ±30V 1.18pF @ 25V 38nC @ 10V 250V TO-3P-3 Full Pack

FQAF9P25 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 650 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.18pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 7.1A.Peak drain current is 28.4A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FQAF9P25 Features


the avalanche energy rating (Eas) is 650 mJ
based on its rated peak drain current 28.4A.
a 250V drain to source voltage (Vdss)


FQAF9P25 Applications


There are a lot of Rochester Electronics, LLC
FQAF9P25 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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