FQAF9N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

29A

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

7.2A

Peak Reflow Temperature (Cel) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Elements :

1

Terminal Finish :

MATTE TIN

Package / Case :

TO-3P-3 Full Pack

Drain-source On Resistance-Max :

0.73Ohm

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

360 mJ

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Number of Terminations :

3

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7.2A Tc

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1.45pF @ 25V

Qualification Status :

COMMERCIAL

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

90W Tc

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

DS Breakdown Voltage-Min :

500V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

730m Ω @ 3.6A, 10V