FQAF9N50

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1.45pF @ 25V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

360 mJ

Current - Continuous Drain (Id) @ 25°C :

7.2A Tc

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

29A

Case Connection :

Isolated

JESD-609 Code :

e3

Package / Case :

TO-3P-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Power Dissipation-Max :

90W Tc

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.73Ohm

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

7.2A

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Drain to Source Voltage (Vdss) :

500V

Rds On (Max) @ Id, Vgs :

730m Ω @ 3.6A, 10V

Terminal Position :

Single

Number of Elements :

1