FQAF90N08

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Mfr.Part #
FQAF90N08
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 80V 56A TO3PF
Stock
1,157
In Stock :
1,157

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Mounting Type :
Through Hole
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
QFET®
DS Breakdown Voltage-Min :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Pin Count :
3
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Vgs(th) (Max) @ Id :
4V @ 250µA
JESD-609 Code :
e3
Operating Temperature :
-55°C~175°C TJ
Terminal Finish :
MATTE TIN
Number of Elements :
1
Case Connection :
Isolated
Package / Case :
TO-3P-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3.25pF @ 25V
Vgs (Max) :
±25V
Rds On (Max) @ Id, Vgs :
16m Ω @ 28A, 10V
Peak Reflow Temperature (Cel) :
Not Applicable
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
0.016Ohm
Avalanche Energy Rating (Eas) :
1360 mJ
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
100W Tc
Qualification Status :
COMMERCIAL
Pulsed Drain Current-Max (IDM) :
224A
Reach Compliance Code :
Unknown
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
56A
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
56A Tc
Datasheets
FQAF90N08
Introducing Transistors - FETs, MOSFETs - Single onsemi FQAF90N08 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3 Full Pack, Number of Terminations:3, FQAF90N08 pinout, FQAF90N08 datasheet PDF, FQAF90N08 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQAF90N08 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQAF90N08


N-Channel Tube 16m Ω @ 28A, 10V ±25V 3.25pF @ 25V 110nC @ 10V 80V TO-3P-3 Full Pack

FQAF90N08 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1360 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3.25pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 56A.A maximum pulsed drain current of 224A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 80V.In order to operate this transistor, a voltage of 80V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

FQAF90N08 Features


the avalanche energy rating (Eas) is 1360 mJ
based on its rated peak drain current 224A.
a 80V drain to source voltage (Vdss)


FQAF90N08 Applications


There are a lot of Rochester Electronics, LLC
FQAF90N08 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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