FQAF90N08
- Mfr.Part #
- FQAF90N08
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 56A TO3PF
- Stock
- 1,157
- In Stock :
- 1,157
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- QFET®
- DS Breakdown Voltage-Min :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Pin Count :
- 3
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Case Connection :
- Isolated
- Package / Case :
- TO-3P-3 Full Pack
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.25pF @ 25V
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 28A, 10V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.016Ohm
- Avalanche Energy Rating (Eas) :
- 1360 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 100W Tc
- Qualification Status :
- COMMERCIAL
- Pulsed Drain Current-Max (IDM) :
- 224A
- Reach Compliance Code :
- Unknown
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 56A
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 80V
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Datasheets
- FQAF90N08

N-Channel Tube 16m Ω @ 28A, 10V ±25V 3.25pF @ 25V 110nC @ 10V 80V TO-3P-3 Full Pack
FQAF90N08 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1360 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3.25pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 56A.A maximum pulsed drain current of 224A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 80V.In order to operate this transistor, a voltage of 80V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
FQAF90N08 Features
the avalanche energy rating (Eas) is 1360 mJ
based on its rated peak drain current 224A.
a 80V drain to source voltage (Vdss)
FQAF90N08 Applications
There are a lot of Rochester Electronics, LLC
FQAF90N08 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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