FQAF8N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2.35pF @ 25V

Number of Terminations :

3

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

5.9A Tc

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

23.6A

Transistor Element Material :

SILICON

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

800V

Avalanche Energy Rating (Eas) :

850 mJ

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

800V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

Drain Current-Max (Abs) (ID) :

5.9A

Reach Compliance Code :

Unknown

Package / Case :

TO-3P-3 Full Pack

Power Dissipation-Max :

107W Tc

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.95A, 10V