FQAF7N90

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

900V

Avalanche Energy Rating (Eas) :

830 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2.28pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-3P-3 Full Pack

Rds On (Max) @ Id, Vgs :

1.55 Ω @ 2.6A, 10V

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

20.8A

Power Dissipation-Max :

107W Tc

Reach Compliance Code :

Unknown

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

5.2A

FET Type :

N-Channel

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

Not Applicable

Packaging :

Tube

Drain to Source Voltage (Vdss) :

900V

Pin Count :

3