FQAF7N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Element Material :

SILICON

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.55 Ω @ 2.6A, 10V

Drain Current-Max (Abs) (ID) :

5.2A

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Surface Mount :

No

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

900V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-3P-3 Full Pack

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

107W Tc

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Avalanche Energy Rating (Eas) :

830 mJ

Number of Elements :

1

Terminal Position :

Single

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

20.8A

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

900V

Input Capacitance (Ciss) (Max) @ Vds :

2.28pF @ 25V