FQAF70N15
- Mfr.Part #
- FQAF70N15
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 44A TO3PF
- Stock
- 925
- In Stock :
- 925
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 175nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 176A
- Drain-source On Resistance-Max :
- 0.028Ohm
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 130W Tc
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.4pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- COMMERCIAL
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 22A, 10V
- Vgs (Max) :
- ±25V
- Series :
- QFET®
- Drain Current-Max (Abs) (ID) :
- 44A
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 150V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-3P-3 Full Pack
- DS Breakdown Voltage-Min :
- 150V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Position :
- Single
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Unknown
- Packaging :
- Tube
- Datasheets
- FQAF70N15

N-Channel Tube 28m Ω @ 22A, 10V ±25V 5.4pF @ 25V 175nC @ 10V 150V TO-3P-3 Full Pack
FQAF70N15 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5.4pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [44A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 176A.The DS breakdown voltage should be maintained above 150V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQAF70N15 Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 176A.
a 150V drain to source voltage (Vdss)
FQAF70N15 Applications
There are a lot of Rochester Electronics, LLC
FQAF70N15 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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