FQAF70N15
- Mfr.Part #
- FQAF70N15
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 44A TO3PF
- Stock
- 36,384
- In Stock :
- 36,384
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Case Connection :
- Isolated
- Surface Mount :
- No
- Qualification Status :
- COMMERCIAL
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 150V
- Number of Terminations :
- 3
- Vgs (Max) :
- ±25V
- Series :
- QFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.4pF @ 25V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Packaging :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 175nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 176A
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain-source On Resistance-Max :
- 0.028Ohm
- Terminal Finish :
- MATTE TIN
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 150V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-3P-3 Full Pack
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 22A, 10V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Power Dissipation-Max :
- 130W Tc
- Drain Current-Max (Abs) (ID) :
- 44A
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FQAF70N15

N-Channel Tube 28m Ω @ 22A, 10V ±25V 5.4pF @ 25V 175nC @ 10V 150V TO-3P-3 Full Pack
FQAF70N15 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5.4pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [44A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 176A.The DS breakdown voltage should be maintained above 150V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQAF70N15 Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 176A.
a 150V drain to source voltage (Vdss)
FQAF70N15 Applications
There are a lot of Rochester Electronics, LLC
FQAF70N15 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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