FQAF6N90

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Avalanche Energy Rating (Eas) :

710 mJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

18A

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

DS Breakdown Voltage-Min :

900V

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

900V

Number of Elements :

1

Package / Case :

TO-3P-3 Full Pack

Packaging :

Tube

Pin Count :

3

Surface Mount :

No

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 2.3A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

4.5A

Input Capacitance (Ciss) (Max) @ Vds :

1.88pF @ 25V

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

NOT SPECIFIED

Power Dissipation-Max :

96W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V