FQAF6N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

NOT SPECIFIED

Power Dissipation-Max :

96W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1.88pF @ 25V

Vgs (Max) :

±30V

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

900V

Drain Current-Max (Abs) (ID) :

4.5A

Pulsed Drain Current-Max (IDM) :

18A

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 2.3A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Number of Terminations :

3

Terminal Position :

Single

Case Connection :

Isolated

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

710 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-3P-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

900V

Pin Count :

3

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Pbfree Code :

yes