FQAF6N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1.5pF @ 25V

DS Breakdown Voltage-Min :

800V

Drain to Source Voltage (Vdss) :

800V

Number of Elements :

1

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

90W Tc

Peak Reflow Temperature (Cel) :

Not Applicable

Case Connection :

Isolated

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Surface Mount :

No

Series :

QFET®

Pin Count :

3

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 2.2A, 10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

680 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

4.4A

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Pulsed Drain Current-Max (IDM) :

17.6A

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-3P-3 Full Pack

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3