FQAF44N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

80V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Vgs (Max) :

±25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Power Dissipation-Max :

83W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1.43pF @ 25V

FET Type :

N-Channel

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

80V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

34m Ω @ 17.8A, 10V

Mounting Type :

Through Hole

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

450 mJ

Drain-source On Resistance-Max :

0.034Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

35.6A Tc

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-3P-3 Full Pack

Pulsed Drain Current-Max (IDM) :

142.4A

Surface Mount :

No

Terminal Finish :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

35.6A