FQAF44N08
- Mfr.Part #
- FQAF44N08
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 35.6A TO3PF
- Stock
- 720
- In Stock :
- 720
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 17.8A, 10V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 80V
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.034Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Packaging :
- Tube
- Vgs (Max) :
- ±25V
- Pin Count :
- 3
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 83W Tc
- Pulsed Drain Current-Max (IDM) :
- 142.4A
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.43pF @ 25V
- DS Breakdown Voltage-Min :
- 80V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Series :
- QFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-3P-3 Full Pack
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 35.6A
- Terminal Finish :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 35.6A Tc
- Datasheets
- FQAF44N08

N-Channel Tube 34m Ω @ 17.8A, 10V ±25V 1.43pF @ 25V 50nC @ 10V 80V TO-3P-3 Full Pack
FQAF44N08 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 450 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.43pF @ 25V.35.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 142.4A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 80V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80V.Using drive voltage (10V) reduces this device's overall power consumption.
FQAF44N08 Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 142.4A.
a 80V drain to source voltage (Vdss)
FQAF44N08 Applications
There are a lot of Rochester Electronics, LLC
FQAF44N08 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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