FQAF44N08
- Mfr.Part #
- FQAF44N08
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 35.6A TO3PF
- Stock
- 720
- In Stock :
- 720
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±25V
- Number of Terminations :
- 3
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 35.6A
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-3P-3 Full Pack
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 80V
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 80V
- Case Connection :
- Isolated
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 35.6A Tc
- Series :
- QFET®
- Pulsed Drain Current-Max (IDM) :
- 142.4A
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.43pF @ 25V
- Surface Mount :
- No
- Terminal Finish :
- NOT SPECIFIED
- Power Dissipation-Max :
- 83W Tc
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.034Ohm
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 17.8A, 10V
- Datasheets
- FQAF44N08

N-Channel Tube 34m Ω @ 17.8A, 10V ±25V 1.43pF @ 25V 50nC @ 10V 80V TO-3P-3 Full Pack
FQAF44N08 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 450 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.43pF @ 25V.35.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 142.4A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 80V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80V.Using drive voltage (10V) reduces this device's overall power consumption.
FQAF44N08 Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 142.4A.
a 80V drain to source voltage (Vdss)
FQAF44N08 Applications
There are a lot of Rochester Electronics, LLC
FQAF44N08 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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