FQAF34N25

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

700 mJ

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

21.7A

DS Breakdown Voltage-Min :

250V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

250V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

85m Ω @ 10.9A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Terminal Position :

Single

Pin Count :

3

Transistor Element Material :

SILICON

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.085Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

86.8A

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

100W Tc

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

2.75pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

21.7A Tc

Package / Case :

TO-3P-3 Full Pack