FQAF28N15

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1.6pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

102W Tc

Package / Case :

TO-3P-3 Full Pack

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

88A

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.09Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Terminations :

3

DS Breakdown Voltage-Min :

150V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Case Connection :

Isolated

Surface Mount :

No

Pin Count :

3

Terminal Finish :

NOT SPECIFIED

Vgs (Max) :

±25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

90m Ω @ 11A, 10V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

300 mJ

Drain to Source Voltage (Vdss) :

150V

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

22A

Packaging :

Tube

Terminal Position :

Single

Pbfree Code :

yes

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V