FQAF28N15
- Mfr.Part #
- FQAF28N15
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 22A TO3PF
- Stock
- 473
- In Stock :
- 473
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Qualification Status :
- COMMERCIAL
- Drain to Source Voltage (Vdss) :
- 150V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.6pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Power Dissipation-Max :
- 102W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pbfree Code :
- yes
- Package / Case :
- TO-3P-3 Full Pack
- DS Breakdown Voltage-Min :
- 150V
- JESD-30 Code :
- R-PSFM-T3
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 22A
- Vgs (Max) :
- ±25V
- Series :
- QFET®
- Pulsed Drain Current-Max (IDM) :
- 88A
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.09Ohm
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 11A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Datasheets
- FQAF28N15

N-Channel Tube 90m Ω @ 11A, 10V ±25V 1.6pF @ 25V 52nC @ 10V 150V TO-3P-3 Full Pack
FQAF28N15 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.6pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 22A.A maximum pulsed drain current of 88A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
FQAF28N15 Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 88A.
a 150V drain to source voltage (Vdss)
FQAF28N15 Applications
There are a lot of Rochester Electronics, LLC
FQAF28N15 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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