FQAF19N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Package / Case :

TO-3P-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Surface Mount :

No

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.6A, 10V

Number of Terminations :

3

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Pulsed Drain Current-Max (IDM) :

44.8A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3.6pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Power Dissipation-Max :

120W Tc

Series :

QFET®

Peak Reflow Temperature (Cel) :

Not Applicable

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

11.2A Tc

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.38Ohm

Pbfree Code :

yes

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Drain Current-Max (Abs) (ID) :

11.2A

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

1150 mJ

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3