FQAF19N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

600V

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

Transistor Application :

SWITCHING

Number of Terminations :

3

Packaging :

Tube

Transistor Element Material :

SILICON

FET Type :

N-Channel

Pin Count :

3

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.6A, 10V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

44.8A

Series :

QFET®

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

1150 mJ

Package / Case :

TO-3P-3 Full Pack

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

11.2A

Drain-source On Resistance-Max :

0.38Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3.6pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

11.2A Tc

Drain to Source Voltage (Vdss) :

600V

Reach Compliance Code :

Unknown

Number of Elements :

1

JESD-609 Code :

e3

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Power Dissipation-Max :

120W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V