FQAF19N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

11.2A

Avalanche Energy Rating (Eas) :

1150 mJ

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.6A, 10V

Reach Compliance Code :

Unknown

Package / Case :

TO-3P-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

44.8A

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

11.2A Tc

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Series :

QFET®

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3.6pF @ 25V

FET Type :

N-Channel

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

120W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable

DS Breakdown Voltage-Min :

600V

Pin Count :

3

Number of Elements :

1

Pbfree Code :

yes

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.38Ohm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Surface Mount :

No

Packaging :

Tube

Transistor Element Material :

SILICON