FQAF19N20L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Terminations :

3

Surface Mount :

No

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

DS Breakdown Voltage-Min :

200V

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Power Dissipation-Max :

85W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2.2pF @ 25V

Drain to Source Voltage (Vdss) :

200V

Case Connection :

Isolated

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.14Ohm

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-3P-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

Not Applicable

Drain Current-Max (Abs) (ID) :

16A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

64A

Pin Count :

3

Qualification Status :

COMMERCIAL

Series :

QFET®

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

140m Ω @ 8A, 10V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

250 mJ

Transistor Element Material :

SILICON

Mounting Type :

Through Hole