FQAF19N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Case Connection :

Isolated

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

15A

Pulsed Drain Current-Max (IDM) :

60A

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Series :

QFET®

Peak Reflow Temperature (Cel) :

Not Applicable

DS Breakdown Voltage-Min :

200V

Power Dissipation-Max :

85W Tc

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

150m Ω @ 7.5A, 10V

Surface Mount :

No

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

15A Tc

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Drain-source On Resistance-Max :

0.15Ohm

Terminal Position :

Single

Package / Case :

TO-3P-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

200V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1.6pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

250 mJ

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)