FQAF19N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

250 mJ

Power Dissipation-Max :

85W Tc

DS Breakdown Voltage-Min :

200V

Pulsed Drain Current-Max (IDM) :

60A

Number of Terminations :

3

Pin Count :

3

Drain Current-Max (Abs) (ID) :

15A

Input Capacitance (Ciss) (Max) @ Vds :

1.6pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Number of Elements :

1

Package / Case :

TO-3P-3 Full Pack

Terminal Position :

Single

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

Not Applicable

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

150m Ω @ 7.5A, 10V

Drain to Source Voltage (Vdss) :

200V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.15Ohm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole