FQAF19N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

250 mJ

Packaging :

Tube

Terminal Position :

Single

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Drain to Source Voltage (Vdss) :

200V

Input Capacitance (Ciss) (Max) @ Vds :

1.6pF @ 25V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

15A

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.15Ohm

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Power Dissipation-Max :

85W Tc

Rds On (Max) @ Id, Vgs :

150m Ω @ 7.5A, 10V

Series :

QFET®

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

200V

Package / Case :

TO-3P-3 Full Pack

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Case Connection :

Isolated

Number of Elements :

1

Surface Mount :

No

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

60A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN