FQAF16N25C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

250V

Rds On (Max) @ Id, Vgs :

270m Ω @ 5.7A, 10V

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Package / Case :

TO-3P-3 Full Pack

Drain Current-Max (Abs) (ID) :

11.4A

Drain-source On Resistance-Max :

0.27Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

53.5nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

Avalanche Energy Rating (Eas) :

410 mJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Pin Count :

3

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1.08pF @ 25V

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

250V

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

45.6A

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

73W Tc

Transistor Application :

SWITCHING