FQA38N30
- Mfr.Part #
- FQA38N30
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 38.4A TO3P
- Stock
- 22,933
- In Stock :
- 22,933
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Power Dissipation-Max :
- 290W Tc
- Current Rating :
- 38.4A
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- QFET®
- Length :
- 15.8mm
- Width :
- 5mm
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 19.2A, 10V
- Power Dissipation :
- 290W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-3P-3, SC-65-3
- Turn On Delay Time :
- 80 ns
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Drain-source On Resistance-Max :
- 0.085Ohm
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Drain to Source Breakdown Voltage :
- 300V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Rise Time :
- 430ns
- Weight :
- 6.401g
- Continuous Drain Current (ID) :
- 38.4A
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 300V
- Fall Time (Typ) :
- 190 ns
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 38.4A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Published :
- 2000
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Turn-Off Delay Time :
- 170 ns
- Height :
- 18.9mm
- Mount :
- Through Hole
- Datasheets
- FQA38N30

N-Channel Tube 85m Ω @ 19.2A, 10V ±30V 4400pF @ 25V 120nC @ 10V TO-3P-3, SC-65-3
FQA38N30 Description
These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary planar stripe DMOS process developed by ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half bridges, and high efficiency switch mode power supplies.
FQA38N30 Features
-
38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
-
Low Gate Charge (Typ. 90 nC)
-
Low Crss (Typ. 70 pF)
-
100% Avalanche Tested
-
RoHS compliant
FQA38N30 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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