FQA38N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Height :

18.9mm

Power Dissipation :

290W

Continuous Drain Current (ID) :

38.4A

FET Type :

N-Channel

Weight :

6.401g

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

300V

Series :

QFET®

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Published :

2000

Package / Case :

TO-3P-3, SC-65-3

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

430ns

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.085Ohm

Drain to Source Breakdown Voltage :

300V

Number of Pins :

3

Mount :

Through Hole

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

85m Ω @ 19.2A, 10V

Factory Lead Time :

4 Weeks

Length :

15.8mm

Current Rating :

38.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Mounting Type :

Through Hole

ECCN Code :

EAR99

Turn-Off Delay Time :

170 ns

Current - Continuous Drain (Id) @ 25°C :

38.4A Tc

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Element Configuration :

Single

Fall Time (Typ) :

190 ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

290W Tc

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Lead Free :

Lead Free

Width :

5mm

Turn On Delay Time :

80 ns