FQA38N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Weight :

6.401g

Rds On (Max) @ Id, Vgs :

85m Ω @ 19.2A, 10V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Series :

QFET®

Fall Time (Typ) :

190 ns

Power Dissipation-Max :

290W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Voltage - Rated DC :

300V

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Width :

5mm

Element Configuration :

Single

Continuous Drain Current (ID) :

38.4A

Pbfree Code :

yes

Mounting Type :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

Current - Continuous Drain (Id) @ 25°C :

38.4A Tc

Current Rating :

38.4A

Turn-Off Delay Time :

170 ns

Transistor Application :

SWITCHING

Length :

15.8mm

Rise Time :

430ns

Qualification Status :

Not Qualified

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Height :

18.9mm

JESD-609 Code :

e3

Mount :

Through Hole

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Published :

2000

Power Dissipation :

290W

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

4 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Number of Elements :

1

Drain to Source Breakdown Voltage :

300V

Drain-source On Resistance-Max :

0.085Ohm

Turn On Delay Time :

80 ns

Packaging :

Tube