FQA38N30

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Mfr.Part #
FQA38N30
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 300V 38.4A TO3P
Stock
22,933
In Stock :
22,933

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Weight :
6.401g
Rds On (Max) @ Id, Vgs :
85m Ω @ 19.2A, 10V
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Series :
QFET®
Fall Time (Typ) :
190 ns
Power Dissipation-Max :
290W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
5V @ 250μA
Voltage - Rated DC :
300V
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
Width :
5mm
Element Configuration :
Single
Continuous Drain Current (ID) :
38.4A
Pbfree Code :
yes
Mounting Type :
Through Hole
Package / Case :
TO-3P-3, SC-65-3
Current - Continuous Drain (Id) @ 25°C :
38.4A Tc
Current Rating :
38.4A
Turn-Off Delay Time :
170 ns
Transistor Application :
SWITCHING
Length :
15.8mm
Rise Time :
430ns
Qualification Status :
Not Qualified
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 1 week ago)
Height :
18.9mm
JESD-609 Code :
e3
Mount :
Through Hole
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
RoHS Status :
RoHS Compliant
Published :
2000
Power Dissipation :
290W
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
4 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Number of Elements :
1
Drain to Source Breakdown Voltage :
300V
Drain-source On Resistance-Max :
0.085Ohm
Turn On Delay Time :
80 ns
Packaging :
Tube
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA38N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, FQA38N30 pinout, FQA38N30 datasheet PDF, FQA38N30 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA38N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA38N30


N-Channel Tube 85m Ω @ 19.2A, 10V ±30V 4400pF @ 25V 120nC @ 10V TO-3P-3, SC-65-3

FQA38N30 Description


These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary planar stripe DMOS process developed by ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half bridges, and high efficiency switch mode power supplies.



FQA38N30 Features


  • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A

  • Low Gate Charge (Typ. 90 nC)

  • Low Crss (Typ. 70 pF)

  • 100% Avalanche Tested

  • RoHS compliant



FQA38N30 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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