FQA38N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation-Max :

290W Tc

Current Rating :

38.4A

JESD-609 Code :

e3

Vgs (Max) :

±30V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Length :

15.8mm

Width :

5mm

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

85m Ω @ 19.2A, 10V

Power Dissipation :

290W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Package / Case :

TO-3P-3, SC-65-3

Turn On Delay Time :

80 ns

Transistor Application :

SWITCHING

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

4 Weeks

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Drain-source On Resistance-Max :

0.085Ohm

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Drain to Source Breakdown Voltage :

300V

Pbfree Code :

yes

ECCN Code :

EAR99

Rise Time :

430ns

Weight :

6.401g

Continuous Drain Current (ID) :

38.4A

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Voltage - Rated DC :

300V

Fall Time (Typ) :

190 ns

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

38.4A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Qualification Status :

Not Qualified

Published :

2000

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Turn-Off Delay Time :

170 ns

Height :

18.9mm

Mount :

Through Hole