FQA35N40

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

DS Breakdown Voltage-Min :

400V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Package / Case :

TO-3P-3, SC-65-3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1600 mJ

Packaging :

Tube

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.105Ohm

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain Current-Max (Abs) (ID) :

35A

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

5.6pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

140A

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

400V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Surface Mount :

No

Pbfree Code :

yes

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

105m Ω @ 17.5A, 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

310W Tc

Vgs (Max) :

±30V