FQA34N20L
- Mfr.Part #
- FQA34N20L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 34A TO3P
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- NOT SPECIFIED
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- DS Breakdown Voltage-Min :
- 200V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 34A
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 17A, 10V
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.9pF @ 25V
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 136A
- Drain-source On Resistance-Max :
- 0.08Ohm
- Drain to Source Voltage (Vdss) :
- 200V
- Series :
- QFET®
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 640 mJ
- Power Dissipation-Max :
- 210W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 5V
- Pin Count :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Datasheets
- FQA34N20L

N-Channel Tube 75m Ω @ 17A, 10V ±20V 3.9pF @ 25V 72nC @ 5V 200V TO-3P-3, SC-65-3
FQA34N20L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 640 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3.9pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 34A.Peak drain current is 136A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
FQA34N20L Features
the avalanche energy rating (Eas) is 640 mJ
based on its rated peak drain current 136A.
a 200V drain to source voltage (Vdss)
FQA34N20L Applications
There are a lot of Rochester Electronics, LLC
FQA34N20L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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