FQA35N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

400V

Number of Elements :

1

Mounting Type :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

Rds On (Max) @ Id, Vgs :

105m Ω @ 17.5A, 10V

Pulsed Drain Current-Max (IDM) :

140A

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

310W Tc

Transistor Element Material :

SILICON

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Pin Count :

3

Drain Current-Max (Abs) (ID) :

35A

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

400V

Input Capacitance (Ciss) (Max) @ Vds :

5.6pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.105Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

FET Type :

N-Channel

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

1600 mJ

Peak Reflow Temperature (Cel) :

Not Applicable

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Series :

QFET®