FQA34N25
- Mfr.Part #
- FQA34N25
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 34A TO3P
- Stock
- 36,568
- In Stock :
- 36,568
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.085Ohm
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.75pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 136A
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Terminal Finish :
- MATTE TIN
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 17A, 10V
- Power Dissipation-Max :
- 245W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-3P-3, SC-65-3
- Drain to Source Voltage (Vdss) :
- 250V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 700 mJ
- DS Breakdown Voltage-Min :
- 250V
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 34A
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Datasheets
- FQA34N25

N-Channel Tube 85m Ω @ 17A, 10V ±30V 2.75pF @ 25V 80nC @ 10V 250V TO-3P-3, SC-65-3
FQA34N25 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.75pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 34A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 136A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 250V in order to maintain normal operation.Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQA34N25 Features
the avalanche energy rating (Eas) is 700 mJ
based on its rated peak drain current 136A.
a 250V drain to source voltage (Vdss)
FQA34N25 Applications
There are a lot of Rochester Electronics, LLC
FQA34N25 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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