FQA34N25

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Mfr.Part #
FQA34N25
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 250V 34A TO3P
Stock
36,568
In Stock :
36,568

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Transistor Application :
SWITCHING
Number of Terminations :
3
Terminal Finish :
MATTE TIN
Drain-source On Resistance-Max :
0.085Ohm
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Transistor Element Material :
SILICON
Surface Mount :
No
Power Dissipation-Max :
245W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Drain to Source Voltage (Vdss) :
250V
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
85m Ω @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
2.75pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
136A
Qualification Status :
COMMERCIAL
DS Breakdown Voltage-Min :
250V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
FET Type :
N-Channel
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Package / Case :
TO-3P-3, SC-65-3
Reach Compliance Code :
Unknown
Drain Current-Max (Abs) (ID) :
34A
Avalanche Energy Rating (Eas) :
700 mJ
Peak Reflow Temperature (Cel) :
Not Applicable
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
5V @ 250μA
Datasheets
FQA34N25
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA34N25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, FQA34N25 pinout, FQA34N25 datasheet PDF, FQA34N25 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA34N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA34N25


N-Channel Tube 85m Ω @ 17A, 10V ±30V 2.75pF @ 25V 80nC @ 10V 250V TO-3P-3, SC-65-3

FQA34N25 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.75pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 34A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 136A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 250V in order to maintain normal operation.Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FQA34N25 Features


the avalanche energy rating (Eas) is 700 mJ
based on its rated peak drain current 136A.
a 250V drain to source voltage (Vdss)


FQA34N25 Applications


There are a lot of Rochester Electronics, LLC
FQA34N25 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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