FQA34N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Number of Elements :

1

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

136A

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2.75pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.085Ohm

Drain Current-Max (Abs) (ID) :

34A

Surface Mount :

No

JESD-609 Code :

e3

Pin Count :

3

Vgs (Max) :

±30V

FET Type :

N-Channel

Pbfree Code :

yes

Power Dissipation-Max :

245W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

Not Applicable

DS Breakdown Voltage-Min :

250V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

85m Ω @ 17A, 10V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

700 mJ

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-3P-3, SC-65-3

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

250V

Packaging :

Tube

Reach Compliance Code :

Unknown