FQA30N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Power Dissipation-Max :

290W Tc

JESD-609 Code :

e3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Voltage - Rated DC :

400V

Radiation Hardening :

No

Weight :

6.401g

Length :

6.35mm

Drain to Source Breakdown Voltage :

400V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

170 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Width :

6.35mm

Rise Time :

320ns

Height :

6.35mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Power Dissipation :

290W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

190 ns

Continuous Drain Current (ID) :

30A

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Series :

QFET®

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

140m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Resistance :

140mOhm

Mounting Type :

Through Hole

ECCN Code :

EAR99

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

30A

Contact Plating :

Tin

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Turn On Delay Time :

80 ns

Package / Case :

TO-3P-3, SC-65-3

Element Configuration :

Single

Transistor Element Material :

SILICON

Number of Pins :

3

Factory Lead Time :

10 Weeks