FQA34N20L

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Mfr.Part #
FQA34N20L
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 200V 34A TO3P
Stock
50
In Stock :
50

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Unknown
Drain Current-Max (Abs) (ID) :
34A
Drain to Source Voltage (Vdss) :
200V
Power Dissipation-Max :
210W Tc
Vgs(th) (Max) @ Id :
2V @ 250μA
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 5V
Drain-source On Resistance-Max :
0.08Ohm
DS Breakdown Voltage-Min :
200V
Pin Count :
3
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
640 mJ
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
136A
Pbfree Code :
yes
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-3P-3, SC-65-3
Terminal Finish :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
3.9pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
QFET®
Transistor Application :
SWITCHING
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
JESD-30 Code :
R-PSFM-T3
Qualification Status :
COMMERCIAL
Vgs (Max) :
±20V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
75m Ω @ 17A, 10V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Datasheets
FQA34N20L
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA34N20L from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, FQA34N20L pinout, FQA34N20L datasheet PDF, FQA34N20L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA34N20L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA34N20L


N-Channel Tube 75m Ω @ 17A, 10V ±20V 3.9pF @ 25V 72nC @ 5V 200V TO-3P-3, SC-65-3

FQA34N20L Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 640 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3.9pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 34A.Peak drain current is 136A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

FQA34N20L Features


the avalanche energy rating (Eas) is 640 mJ
based on its rated peak drain current 136A.
a 200V drain to source voltage (Vdss)


FQA34N20L Applications


There are a lot of Rochester Electronics, LLC
FQA34N20L applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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