FQA32N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

245 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

2220pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

204W Tc

Radiation Hardening :

No

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Width :

5mm

Power Dissipation :

204W

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Voltage - Rated DC :

200V

Fall Time (Typ) :

210 ns

Packaging :

Tube

Series :

QFET®

REACH SVHC :

No SVHC

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

955 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Weight :

6.401g

Length :

15.8mm

Rise Time :

270ns

Drain-source On Resistance-Max :

0.082Ohm

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

82m Ω @ 16A, 10V

Number of Pins :

3

Mounting Type :

Through Hole

Current Rating :

32A

Mount :

Through Hole

Turn On Delay Time :

25 ns

Number of Terminations :

3

Element Configuration :

Single

Package / Case :

TO-3P-3, SC-65-3

Number of Elements :

1

Height :

18.9mm

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

32A

Drain to Source Breakdown Voltage :

200V