FQA32N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Turn-Off Delay Time :

245 ns

Mount :

Through Hole

Threshold Voltage :

4V

JESD-609 Code :

e3

Voltage - Rated DC :

200V

FET Type :

N-Channel

Width :

5mm

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Height :

18.9mm

Power Dissipation :

204W

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Continuous Drain Current (ID) :

32A

RoHS Status :

ROHS3 Compliant

Weight :

6.401g

Rds On (Max) @ Id, Vgs :

82m Ω @ 16A, 10V

Package / Case :

TO-3P-3, SC-65-3

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

955 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

15.8mm

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.082Ohm

Pbfree Code :

yes

Series :

QFET®

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

200V

Fall Time (Typ) :

210 ns

Input Capacitance (Ciss) (Max) @ Vds :

2220pF @ 25V

Element Configuration :

Single

Power Dissipation-Max :

204W Tc

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Current Rating :

32A

Number of Pins :

3

Rise Time :

270ns

Packaging :

Tube

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Published :

2004