FQA32N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

955 mJ

Rds On (Max) @ Id, Vgs :

82m Ω @ 16A, 10V

Continuous Drain Current (ID) :

32A

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Power Dissipation :

204W

Number of Elements :

1

Transistor Application :

SWITCHING

Power Dissipation-Max :

204W Tc

Published :

2004

Voltage - Rated DC :

200V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Package / Case :

TO-3P-3, SC-65-3

Terminal Finish :

Tin (Sn)

Threshold Voltage :

4V

Width :

5mm

Weight :

6.401g

Fall Time (Typ) :

210 ns

Mounting Type :

Through Hole

Packaging :

Tube

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2220pF @ 25V

Drain-source On Resistance-Max :

0.082Ohm

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

200V

Series :

QFET®

Height :

18.9mm

Rise Time :

270ns

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

245 ns

Length :

15.8mm

Turn On Delay Time :

25 ns

Current Rating :

32A

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel