FQA32N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

270ns

Height :

18.9mm

Current Rating :

32A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

82m Ω @ 16A, 10V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Avalanche Energy Rating (Eas) :

955 mJ

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Transistor Element Material :

SILICON

Width :

5mm

Drain to Source Breakdown Voltage :

200V

Fall Time (Typ) :

210 ns

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Published :

2004

Vgs (Max) :

±30V

Radiation Hardening :

No

Threshold Voltage :

4V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Continuous Drain Current (ID) :

32A

Drain-source On Resistance-Max :

0.082Ohm

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Package / Case :

TO-3P-3, SC-65-3

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

204W Tc

Number of Pins :

3

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

25 ns

Weight :

6.401g

Voltage - Rated DC :

200V

Mounting Type :

Through Hole

Series :

QFET®

Length :

15.8mm

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2220pF @ 25V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

245 ns

Power Dissipation :

204W

Number of Terminations :

3