FQA32N20C
- Mfr.Part #
- FQA32N20C
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 32A TO3PN
- Stock
- 49,379
- In Stock :
- 49,379
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 25 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Turn-Off Delay Time :
- 245 ns
- Mount :
- Through Hole
- Threshold Voltage :
- 4V
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 200V
- FET Type :
- N-Channel
- Width :
- 5mm
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Height :
- 18.9mm
- Power Dissipation :
- 204W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Continuous Drain Current (ID) :
- 32A
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 6.401g
- Rds On (Max) @ Id, Vgs :
- 82m Ω @ 16A, 10V
- Package / Case :
- TO-3P-3, SC-65-3
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 955 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 15.8mm
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Drain-source On Resistance-Max :
- 0.082Ohm
- Pbfree Code :
- yes
- Series :
- QFET®
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 200V
- Fall Time (Typ) :
- 210 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2220pF @ 25V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 204W Tc
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Current Rating :
- 32A
- Number of Pins :
- 3
- Rise Time :
- 270ns
- Packaging :
- Tube
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Published :
- 2004
- Datasheets
- FQA32N20C

N-Channel Tube 82m Ω @ 16A, 10V ±30V 2220pF @ 25V 110nC @ 10V TO-3P-3, SC-65-3
FQA32N20C Description
The FQA32N20C is an N-Channel enhancement mode power MOSFET produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
FQA32N20C Features
-
32A, 200V
-
RDS(on) = 82mΩ(Max.) @VGS = 10 V, ID = 16A
-
Low gate charge ( Typ. 82.5nC)
-
Low Crss ( Typ. 185pF)
-
100% avalanche tested
FQA32N20C Applications
-
Other Audio & Video
-
Switched Mode Power Supplies
-
Active Power Factor Correction (PFC)
-
Electronic Lamp Ballasts
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