FQA32N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Rds On (Max) @ Id, Vgs :

82m Ω @ 16A, 10V

Transistor Application :

SWITCHING

Power Dissipation :

204W

Power Dissipation-Max :

204W Tc

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

32A

Radiation Hardening :

No

Turn On Delay Time :

25 ns

Rise Time :

270ns

Number of Pins :

3

Number of Elements :

1

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Turn-Off Delay Time :

245 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

955 mJ

Package / Case :

TO-3P-3, SC-65-3

Mount :

Through Hole

Mounting Type :

Through Hole

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Current Rating :

32A

Voltage - Rated DC :

200V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Height :

18.9mm

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.082Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

210 ns

Number of Terminations :

3

Weight :

6.401g

Input Capacitance (Ciss) (Max) @ Vds :

2220pF @ 25V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

200V

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Series :

QFET®

Width :

5mm

JESD-609 Code :

e3

Length :

15.8mm