FQA36P15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

150 ns

Resistance :

90mOhm

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-3P-3, SC-65-3

Packaging :

Tube

Mount :

Through Hole

Series :

QFET®

Weight :

6.401g

Height :

18.9mm

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

36A Tc

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current Rating :

-36A

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

1

Additional Feature :

FAST SWITCHING

Drain to Source Voltage (Vdss) :

150V

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

294W Tc

Drain to Source Breakdown Voltage :

-150V

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Number of Terminations :

3

Mounting Type :

Through Hole

Lead Free :

Lead Free

Turn-Off Delay Time :

155 ns

REACH SVHC :

No SVHC

Number of Pins :

3

ECCN Code :

EAR99

Threshold Voltage :

-4V

Length :

15.8mm

Pbfree Code :

yes

Voltage - Rated DC :

-150V

Turn On Delay Time :

50 ns

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

294W

Continuous Drain Current (ID) :

-36A

Rds On (Max) @ Id, Vgs :

90m Ω @ 18A, 10V

Gate to Source Voltage (Vgs) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3320pF @ 25V

Vgs (Max) :

±30V

Factory Lead Time :

4 Weeks

Width :

5mm

Published :

2013

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

350ns