FQA36P15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

Voltage - Rated DC :

-150V

Number of Pins :

3

Qualification Status :

Not Qualified

Weight :

6.401g

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

294W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

FAST SWITCHING

Operating Temperature :

-55°C~175°C TJ

FET Type :

P-Channel

Vgs (Max) :

±30V

Power Dissipation :

294W

Resistance :

90mOhm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Lead Free :

Lead Free

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Packaging :

Tube

Drain to Source Voltage (Vdss) :

150V

JESD-609 Code :

e3

Fall Time (Typ) :

150 ns

Element Configuration :

Single

Current Rating :

-36A

Terminal Finish :

Tin (Sn)

Series :

QFET®

Turn-Off Delay Time :

155 ns

Width :

5mm

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Rds On (Max) @ Id, Vgs :

90m Ω @ 18A, 10V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Rise Time :

350ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

-4V

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

50 ns

Package / Case :

TO-3P-3, SC-65-3

REACH SVHC :

No SVHC

Length :

15.8mm

Drain to Source Breakdown Voltage :

-150V

Height :

18.9mm

Input Capacitance (Ciss) (Max) @ Vds :

3320pF @ 25V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-36A