FQA38N30

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Mfr.Part #
FQA38N30
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
38.4A, 300V, N-CHANNEL, MOSFET
Stock
22,933
In Stock :
22,933

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
85m Ω @ 19.2A, 10V
Power Dissipation :
290W
Vgs (Max) :
±30V
Package / Case :
TO-3P-3, SC-65-3
Continuous Drain Current (ID) :
38.4A
Transistor Element Material :
SILICON
Length :
15.8mm
Qualification Status :
Not Qualified
Turn On Delay Time :
80 ns
FET Type :
N-Channel
Mounting Type :
Through Hole
Packaging :
Tube
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.085Ohm
Current - Continuous Drain (Id) @ 25°C :
38.4A Tc
Weight :
6.401g
Width :
5mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 1 week ago)
Lead Free :
Lead Free
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Element Configuration :
Single
Terminal Finish :
Tin (Sn)
Drain to Source Breakdown Voltage :
300V
Height :
18.9mm
Vgs(th) (Max) @ Id :
5V @ 250μA
Current Rating :
38.4A
Turn-Off Delay Time :
170 ns
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
30V
ECCN Code :
EAR99
Factory Lead Time :
4 Weeks
Series :
QFET®
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Power Dissipation-Max :
290W Tc
Number of Pins :
3
Rise Time :
430ns
Voltage - Rated DC :
300V
Fall Time (Typ) :
190 ns
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Published :
2000
Transistor Application :
SWITCHING
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
FQA38N30
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA38N30 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, FQA38N30 pinout, FQA38N30 datasheet PDF, FQA38N30 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA38N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQA38N30


N-Channel Tube 85m Ω @ 19.2A, 10V ±30V 4400pF @ 25V 120nC @ 10V TO-3P-3, SC-65-3

FQA38N30 Description


These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary planar stripe DMOS process developed by ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half bridges, and high efficiency switch mode power supplies.



FQA38N30 Features


  • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A

  • Low Gate Charge (Typ. 90 nC)

  • Low Crss (Typ. 70 pF)

  • 100% Avalanche Tested

  • RoHS compliant



FQA38N30 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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