FQA33N10L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

70 ns

FET Type :

N-Channel

Input Capacitance :

1.63nF

Voltage - Rated DC :

100V

Power Dissipation-Max :

163W Tc

Continuous Drain Current (ID) :

36A

Max Operating Temperature :

175°C

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Current Rating :

36A

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

100V

Lead Free :

Lead Free

Power Dissipation :

163W

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

52 mΩ

Number of Pins :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

52mOhm @ 18A, 10V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Series :

QFET®

Package / Case :

TO-3P-3, SC-65-3

Supplier Device Package :

TO-3P

Drain to Source Resistance :

52mOhm

Fall Time (Typ) :

120 ns

Packaging :

Tube

Rise Time :

470ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V